IRFY430C MOSFET Transistor

The IRFY430C is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFY430C transistor as follows.

IRFY430C Transistor Specification

Transistor Code		IRFY430C
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220MC
Drain-Source Voltage (Maximum)	VDS	500V
Drain Current (Maximum)	ID	3.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.84Ohm
Power Dissipation (Maximum)	PD	45W
Drain-Source Capacitance		610pF
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		29.5nC

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