IRFY430 MOSFET Transistor

The IRFY430 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFY430 transistor as follows.

IRFY430 Transistor Specification

Transistor Code		IRFY430
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220M
Drain-Source Voltage (Maximum)	VDS	500V
Drain Current (Maximum)	ID	3.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.84Ohm
Power Dissipation (Maximum)	PD	45W
Drain-Source Capacitance		610pF
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		29.5nC

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