IRFY320 MOSFET Transistor

The IRFY320 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFY320 transistor as follows.

IRFY320 Transistor Specification

Transistor Code		IRFY320
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-257AB
Drain-Source Voltage (Maximum)	VDS	400V
Drain Current (Maximum)	ID	3.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.8Ohm
Power Dissipation (Maximum)	PD	50W
Rise Time		35nS
Total Gate Charge		15.5nC

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