IRFY220 MOSFET Transistor

The IRFY220 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFY220 transistor as follows.

IRFY220 Transistor Specification

Transistor Code		IRFY220
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-257AB
Drain-Source Voltage (Maximum)	VDS	200V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.92Ohm
Power Dissipation (Maximum)	PD	14W
Rise Time		50nS
Total Gate Charge		14.3nC

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