IRFY210C MOSFET Transistor

The IRFY210C is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFY210C transistor as follows.

IRFY210C Transistor Specification

Transistor Code		IRFY210C
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-257AB
Drain-Source Voltage (Maximum)	VDS	200V
Drain Current (Maximum)	ID	1.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.725Ohm
Power Dissipation (Maximum)	PD	11W
Rise Time		20nS
Total Gate Charge		6.2nC

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