IRFY140M MOSFET Transistor

The IRFY140M is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFY140M transistor as follows.

IRFY140M Transistor Specification

Transistor Code		IRFY140M
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-257AA
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	16A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.077Ohm
Power Dissipation (Maximum)	PD	100W
Drain-Source Capacitance		550pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		145nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		59nC

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