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IRFY130M MOSFET Transistor

The IRFY130M is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFY130M transistor as follows.

Circuit diagram symbol of the IRFY130M transistor

IRFY130M Transistor Specification

Transistor Code IRFY130M
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-257AA
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 14.4A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.18Ohm
Power Dissipation (Maximum) PD 75W
Drain-Source Capacitance 240pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 75nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 28.5nC

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