IRFY120C MOSFET Transistor

The IRFY120C is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFY120C transistor as follows.

IRFY120C Transistor Specification

Transistor Code		IRFY120C
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220MC
Drain-Source Voltage (Maximum)	VDS	100V
Drain Current (Maximum)	ID	7.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.36Ohm
Power Dissipation (Maximum)	PD	30W
Drain-Source Capacitance		350pF
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		17nC

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