IRFY11N50CMA MOSFET Transistor

The IRFY11N50CMA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFY11N50CMA transistor as follows.

IRFY11N50CMA Transistor Specification

Transistor Code		IRFY11N50CMA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-257AA
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.56Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		216pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		71nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		58nC

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