IRFY110 MOSFET Transistor

The IRFY110 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFY110 transistor as follows.

IRFY110 Transistor Specification

Transistor Code		IRFY110
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-257AB
Drain-Source Voltage (Maximum)	VDS	100V
Drain Current (Maximum)	ID	3.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.69Ohm
Power Dissipation (Maximum)	PD	75W
Rise Time		25nS
Total Gate Charge		6.5nC

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