IRFY044M MOSFET Transistor

The IRFY044M is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFY044M transistor as follows.

IRFY044M Transistor Specification

Transistor Code		IRFY044M
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-257AA
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	16A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.04Ohm
Power Dissipation (Maximum)	PD	100W
Drain-Source Capacitance		1100pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		130nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		88nC

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