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IRFW820A MOSFET Transistor

The IRFW820A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFW820A transistor as follows.

Circuit diagram symbol of the IRFW820A transistor

IRFW820A Transistor Specification

Transistor Code IRFW820A
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO263
Drain-Source Voltage (Maximum) VDS 500V
Drain Current (Maximum) ID 2.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 3Ohm
Power Dissipation (Maximum) PD 49W
Drain-Source Capacitance 390pF
Operating Junction Temperature (Maximum) 150°C

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