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IRFW710A MOSFET Transistor

The IRFW710A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFW710A transistor as follows.

Circuit diagram symbol of the IRFW710A transistor

IRFW710A Transistor Specification

Transistor Code IRFW710A
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO263
Drain-Source Voltage (Maximum) VDS 400V
Drain Current (Maximum) ID 2A
Drain-Source On-State Resistance (Maximum) RDS(on) 3.6Ohm
Power Dissipation (Maximum) PD 36W
Drain-Source Capacitance 215pF
Operating Junction Temperature (Maximum) 150°C

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