IRFW640A MOSFET Transistor

The IRFW640A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFW640A transistor as follows.

IRFW640A Transistor Specification

Transistor Code		IRFW640A
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	200V
Drain Current (Maximum)	ID	18A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.18Ohm
Power Dissipation (Maximum)	PD	139W
Drain-Source Capacitance		1160pF
Operating Junction Temperature (Maximum)		150°C

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