IRFW620A MOSFET Transistor

The IRFW620A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFW620A transistor as follows.

IRFW620A Transistor Specification

Transistor Code		IRFW620A
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	200V
Drain Current (Maximum)	ID	5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.8Ohm
Power Dissipation (Maximum)	PD	47W
Drain-Source Capacitance		275pF
Operating Junction Temperature (Maximum)		150°C

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