IRFW614A MOSFET Transistor

The IRFW614A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFW614A transistor as follows.

IRFW614A Transistor Specification

Transistor Code		IRFW614A
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	250V
Drain Current (Maximum)	ID	2.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2Ohm
Power Dissipation (Maximum)	PD	40W
Drain-Source Capacitance		180pF
Operating Junction Temperature (Maximum)		150°C

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