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IRFW610A MOSFET Transistor

The IRFW610A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFW610A transistor as follows.

Circuit diagram symbol of the IRFW610A transistor

IRFW610A Transistor Specification

Transistor Code IRFW610A
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO263
Drain-Source Voltage (Maximum) VDS 200V
Drain Current (Maximum) ID 3.3A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.5Ohm
Power Dissipation (Maximum) PD 38W
Drain-Source Capacitance 160pF
Operating Junction Temperature (Maximum) 150°C

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