IRFW530A MOSFET Transistor

The IRFW530A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFW530A transistor as follows.

IRFW530A Transistor Specification

Transistor Code		IRFW530A
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	100V
Drain Current (Maximum)	ID	14A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.11Ohm
Power Dissipation (Maximum)	PD	55W
Drain-Source Capacitance		610pF
Operating Junction Temperature (Maximum)		150°C

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