IRFW510A MOSFET Transistor

The IRFW510A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFW510A transistor as follows.

IRFW510A Transistor Specification

Transistor Code		IRFW510A
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	100V
Drain Current (Maximum)	ID	5.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.4Ohm
Power Dissipation (Maximum)	PD	33W
Drain-Source Capacitance		190pF
Operating Junction Temperature (Maximum)		150°C

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