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IRFU4510PBF MOSFET Transistor

The IRFU4510PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFU4510PBF transistor as follows.

Circuit diagram symbol of the IRFU4510PBF transistor

IRFU4510PBF Transistor Specification

Transistor Code IRFU4510PBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-251
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 56A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0139Ohm
Power Dissipation (Maximum) PD 143W
Drain-Source Capacitance 213pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 42nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 54nC

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