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IRFU320PBF MOSFET Transistor

The IRFU320PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFU320PBF transistor as follows.

Circuit diagram symbol of the IRFU320PBF transistor

IRFU320PBF Transistor Specification

Transistor Code IRFU320PBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-251
Drain-Source Voltage (Maximum) VDS 400V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 3.1A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.8Ohm
Power Dissipation (Maximum) PD 42W
Drain-Source Capacitance 120pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 14nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 20nC

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