IRFU110PBF MOSFET Transistor

The IRFU110PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFU110PBF transistor as follows.

IRFU110PBF Transistor Specification

Transistor Code		IRFU110PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-251
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	4.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.54Ohm
Power Dissipation (Maximum)	PD	25W
Drain-Source Capacitance		81pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		16nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		8.3nC

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