IRFTS9342PBF MOSFET Transistor

The IRFTS9342PBF is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFTS9342PBF transistor as follows.

IRFTS9342PBF Transistor Specification

Transistor Code		IRFTS9342PBF
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSOP-6
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	5.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.04Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		133pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		13nS
Gate-Threshold Voltage (Maximum)		2.4V
Total Gate Charge		12nC

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