IRFSL7762PBF MOSFET Transistor

The IRFSL7762PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFSL7762PBF transistor as follows.

IRFSL7762PBF Transistor Specification

Transistor Code		IRFSL7762PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-262
Drain-Source Voltage (Maximum)	VDS	75V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	85A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0067Ohm
Power Dissipation (Maximum)	PD	140W
Drain-Source Capacitance		370pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		49nS
Gate-Threshold Voltage (Maximum)		3.7V
Total Gate Charge		85nC

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