IRFSL7730PBF MOSFET Transistor

The IRFSL7730PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFSL7730PBF transistor as follows.

IRFSL7730PBF Transistor Specification

Transistor Code		IRFSL7730PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-262
Drain-Source Voltage (Maximum)	VDS	75V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	195A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0026Ohm
Power Dissipation (Maximum)	PD	375W
Drain-Source Capacitance		1120pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		120nS
Gate-Threshold Voltage (Maximum)		3.7V
Total Gate Charge		271nC

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