IRFSL7434PBF MOSFET Transistor

The IRFSL7434PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFSL7434PBF transistor as follows.

IRFSL7434PBF Transistor Specification

Transistor Code		IRFSL7434PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-262
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	195A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0016Ohm
Power Dissipation (Maximum)	PD	294W
Drain-Source Capacitance		1540pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		68nS
Gate-Threshold Voltage (Maximum)		3.9V
Total Gate Charge		216nC

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