IRFSL5620 MOSFET Transistor

The IRFSL5620 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFSL5620 transistor as follows.

IRFSL5620 Transistor Specification

Transistor Code		IRFSL5620
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO262
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	24A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0775Ohm
Power Dissipation (Maximum)	PD	144W
Total Gate Charge		25nC

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