IRFSL5615PBF MOSFET Transistor

The IRFSL5615PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFSL5615PBF transistor as follows.

IRFSL5615PBF Transistor Specification

Transistor Code		IRFSL5615PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-262
Drain-Source Voltage (Maximum)	VDS	150V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	33A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.042Ohm
Power Dissipation (Maximum)	PD	144W
Drain-Source Capacitance		155pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		23.1nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		26nC

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