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IRFSL5615 MOSFET Transistor

The IRFSL5615 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFSL5615 transistor as follows.

Circuit diagram symbol of the IRFSL5615 transistor

IRFSL5615 Transistor Specification

Transistor Code IRFSL5615
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO262
Drain-Source Voltage (Maximum) VDS 150V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 33A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.042Ohm
Power Dissipation (Maximum) PD 144W
Total Gate Charge 26nC

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