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IRFSL4610PBF MOSFET Transistor

The IRFSL4610PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFSL4610PBF transistor as follows.

Circuit diagram symbol of the IRFSL4610PBF transistor

IRFSL4610PBF Transistor Specification

Transistor Code IRFSL4610PBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-262
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 73A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.014Ohm
Power Dissipation (Maximum) PD 190W
Drain-Source Capacitance 260pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 87nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 90nC

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