IRFSL4510PBF MOSFET Transistor

The IRFSL4510PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFSL4510PBF transistor as follows.

IRFSL4510PBF Transistor Specification

Transistor Code		IRFSL4510PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-262
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	61A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0139Ohm
Power Dissipation (Maximum)	PD	140W
Drain-Source Capacitance		220pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		32nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		58nC

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