IRFSL4127PBF MOSFET Transistor

The IRFSL4127PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFSL4127PBF transistor as follows.

IRFSL4127PBF Transistor Specification

Transistor Code		IRFSL4127PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-262
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	72A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.022Ohm
Power Dissipation (Maximum)	PD	375W
Drain-Source Capacitance		410pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		18nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		100nC

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