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IRFSL4115PBF MOSFET Transistor

The IRFSL4115PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFSL4115PBF transistor as follows.

Circuit diagram symbol of the IRFSL4115PBF transistor

IRFSL4115PBF Transistor Specification

Transistor Code IRFSL4115PBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-262
Drain-Source Voltage (Maximum) VDS 150V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 99A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0121Ohm
Power Dissipation (Maximum) PD 375W
Drain-Source Capacitance 490pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 73nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 77nC

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