IRFSL4010PBF MOSFET Transistor

The IRFSL4010PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFSL4010PBF transistor as follows.

IRFSL4010PBF Transistor Specification

Transistor Code		IRFSL4010PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-262
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	180A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0047Ohm
Power Dissipation (Maximum)	PD	375W
Drain-Source Capacitance		660pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		86nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		143nC

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