IRFSL3607PBF MOSFET Transistor

The IRFSL3607PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFSL3607PBF transistor as follows.

IRFSL3607PBF Transistor Specification

Transistor Code		IRFSL3607PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-262
Drain-Source Voltage (Maximum)	VDS	75V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	80A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.009Ohm
Power Dissipation (Maximum)	PD	140W
Drain-Source Capacitance		280pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		110nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		56nC

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