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IRFSL3107PBF MOSFET Transistor

The IRFSL3107PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFSL3107PBF transistor as follows.

Circuit diagram symbol of the IRFSL3107PBF transistor

IRFSL3107PBF Transistor Specification

Transistor Code IRFSL3107PBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-262
Drain-Source Voltage (Maximum) VDS 75V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 195A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.003Ohm
Power Dissipation (Maximum) PD 370W
Drain-Source Capacitance 840pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 110nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 160nC

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