IRFS730B MOSFET Transistor

The IRFS730B is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFS730B transistor as follows.

IRFS730B Transistor Specification

Transistor Code		IRFS730B
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220F
Drain-Source Voltage (Maximum)	VDS	400V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	5.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1Ohm
Power Dissipation (Maximum)	PD	38W
Drain-Source Capacitance		80pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		55nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		25nC

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