IRFS654B MOSFET Transistor

The IRFS654B is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFS654B transistor as follows.

IRFS654B Transistor Specification

Transistor Code		IRFS654B
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220F
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	21A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.14Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		290pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		195nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		95nC

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