IRFS650A MOSFET Transistor

The IRFS650A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFS650A transistor as follows.

IRFS650A Transistor Specification

Transistor Code		IRFS650A
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220F
Drain-Source Voltage (Maximum)	VDS	200V
Drain Current (Maximum)	ID	15.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.085Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		2300pF
Operating Junction Temperature (Maximum)		150°C

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