IRFS645 MOSFET Transistor

The IRFS645 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFS645 transistor as follows.

IRFS645 Transistor Specification

Transistor Code		IRFS645
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	250V
Drain Current (Maximum)	ID	13A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.34Ohm
Power Dissipation (Maximum)	PD	40W
Operating Junction Temperature (Maximum)		150°C

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