IRFS640A MOSFET Transistor

The IRFS640A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFS640A transistor as follows.

IRFS640A Transistor Specification

Transistor Code		IRFS640A
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220F
Drain-Source Voltage (Maximum)	VDS	200V
Drain Current (Maximum)	ID	9.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.18Ohm
Power Dissipation (Maximum)	PD	43W
Drain-Source Capacitance		1160pF
Operating Junction Temperature (Maximum)		150°C

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