IRFS635 MOSFET Transistor

The IRFS635 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFS635 transistor as follows.

IRFS635 Transistor Specification

Transistor Code		IRFS635
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	250V
Drain Current (Maximum)	ID	6.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.68Ohm
Power Dissipation (Maximum)	PD	35W
Operating Junction Temperature (Maximum)		150°C

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