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IRFS630 MOSFET Transistor

The IRFS630 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFS630 transistor as follows.

Circuit diagram symbol of the IRFS630 transistor

IRFS630 Transistor Specification

Transistor Code IRFS630
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220
Drain-Source Voltage (Maximum) VDS 200V
Drain Current (Maximum) ID 9A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.4Ohm
Power Dissipation (Maximum) PD 35W
Operating Junction Temperature (Maximum) 150°C
Total Gate Charge 43nC

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