IRFS59N10D MOSFET Transistor

The IRFS59N10D is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFS59N10D transistor as follows.

IRFS59N10D Transistor Specification

Transistor Code		IRFS59N10D
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	59A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.025Ohm
Power Dissipation (Maximum)	PD	200W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		5.5V
Total Gate Charge		76nC

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