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IRFS5620PBF MOSFET Transistor

The IRFS5620PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFS5620PBF transistor as follows.

Circuit diagram symbol of the IRFS5620PBF transistor

IRFS5620PBF Transistor Specification

Transistor Code IRFS5620PBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-263
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 24A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0775Ohm
Power Dissipation (Maximum) PD 144W
Drain-Source Capacitance 125pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 14.6nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 25nC

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