IRFS4229PBF MOSFET Transistor

The IRFS4229PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFS4229PBF transistor as follows.

IRFS4229PBF Transistor Specification

Transistor Code		IRFS4229PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-263
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	45A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.048Ohm
Power Dissipation (Maximum)	PD	330W
Drain-Source Capacitance		390pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		31nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		72nC

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