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IRFS4227PBF MOSFET Transistor

The IRFS4227PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFS4227PBF transistor as follows.

Circuit diagram symbol of the IRFS4227PBF transistor

IRFS4227PBF Transistor Specification

Transistor Code IRFS4227PBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-263
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 62A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.026Ohm
Power Dissipation (Maximum) PD 330W
Drain-Source Capacitance 460pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 20nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 70nC

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