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IRFS3507PBF MOSFET Transistor

The IRFS3507PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFS3507PBF transistor as follows.

Circuit diagram symbol of the IRFS3507PBF transistor

IRFS3507PBF Transistor Specification

Transistor Code IRFS3507PBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-263
Drain-Source Voltage (Maximum) VDS 75V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 97A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0088Ohm
Power Dissipation (Maximum) PD 190W
Drain-Source Capacitance 340pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 81nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 88nC

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