IRFS31N20D MOSFET Transistor

The IRFS31N20D is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFS31N20D transistor as follows.

IRFS31N20D Transistor Specification

Transistor Code		IRFS31N20D
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	31A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.082Ohm
Power Dissipation (Maximum)	PD	200W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		5.5V
Total Gate Charge		70nC

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