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IRFS11N50APBF MOSFET Transistor

The IRFS11N50APBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFS11N50APBF transistor as follows.

Circuit diagram symbol of the IRFS11N50APBF transistor

IRFS11N50APBF Transistor Specification

Transistor Code IRFS11N50APBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-263
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 11A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.52Ohm
Power Dissipation (Maximum) PD 170W
Drain-Source Capacitance 208pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 35nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 52nC

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